The channel shares information regarding the 'Power Devices and Circuits' course dictated at the University of Napoli Federico II. The channel has been created as an aid for the enrolled students.
The owner of the channel is an absolute beginner in: youtube; video file making; audio file making; channel description; goggle+; facebook, and many other things that would be useful in improving your experience. Suggestions, help, comments are always welcome.
P.S. Most of the slides used during the lectures come form a previous course dictated by Prof. Paolo Spirito. The owner of the channel gratefully acknowldeges the contibution.
Looks like it needs RC snubbers per mosfet. I build class D amps using irf640n which are 200V and manage to kill them with +/-45V because of those nasty transients. I just found out that the PDF sheets of most transistors have a PSpice model written into them. Should've started using this program a long time ago it seems.
In the shematics, the FETs Seem a little random. In the last schematic how is the top FET ever going to turn ON? It is a N-Channel with Drain at 10V and the Gate also at 10V at most. So Vgs Can never exceed 0V. Same goes for the bottom FET.
"Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures" my.ece.ucsb.edu/Mishra/classfiles/Ambacher_Polarization.pdf
Oh my god! Such a valuable lecture, yet I hear MUSICAL CLASS in behind ? Why did you waste your time on this just to make it PAINFUL to listen :( Shame you couldn't get some directed mics
I hope someone will see this. I have tried re-creating this exact circuit but I do not end up with the same types of graphs. I seem to get oscillations from the MOSFET. I have attached my netlist below. Thanks for your help pastebin.com/ypf4hibR
Sir, At 14:18 (t2-t3 period) , why does all gate current ig flow through Cgd? I think there is also a path through Cgs (at 14:33). In: other words, my question is: Why does the miller plateau exist? I know the equation i_channel=gm*(vgs-vth), but it is vgs that determines ids. So even if ids becomes the full load current, vgs can still increase anyway (although it cannot increase the channel current anymore). Is there anything wrong with my thoughts?
System vibrations are not likely able to bend the chip that is well protected by package and has quite small dimensions. This should be a negligible effect.
Hi, Please, I need your help with my circuit: I have IRF640 and IR2101, Fpwm: 1Khz and Boostrap circuit is C=100nf with diode Rg=10ohmios. VDC=24dc and DC motor. The configuration is Half bridge. I have a problem with high side the transistor, it gets too hot. Could you indicate me which would be the problem? Regards, Wellington
I received a number of requests for the PiN model. Here I post a link to useful papers on the topic - if you use them, plese cite me :-). 1) A.G.M. STROLLO; E. NAPOLI ",Improved PiN Diode Circuit Model with Automatic Parameter Extraction Technique" IEE PROCEEDINGS. CIRCUITS, DEVICES AND SYSTEMS, Vol.144, No.6, pp.329-334, 1997, doi:10.1049/ip-cds:19971487 2) A.G.M. STROLLO; E. NAPOLI ",Power rectifier model including self heating effects" MICROELECTRONICS RELIABILITY, Vol.38, No.12, pp.1899-1906, 1998, doi:10.1016/S0026-2714(98)00156-5 3) A.G.M. STROLLO; E. NAPOLI; L.FRATELLI; G.GIANNINI, 1997. Automatic Parameter Extraction Technique for a PiN Diode Circuit Model. DOI:10.1109/ICMEL.1997.625242. pp.269-272. In Proc. 21st International Conference on Microelectronics (MIEL'97) - ISBN:078033664X vol. 1, (1997), doi.: 10.1109/ICMEL.1997.625242 4) E. NAPOLI; A.G.M. STROLLO, 1998. A Dynamic Electro-thermal Model for Power PiN diode. pp.179-184. In Proc. 4th International Seminar on Power Semiconductors ISPS'98 - ISBN:8001018520, (1998).
@@adolfovaldez6670 received a number of requests for the PiN model. Here I post a link to useful papers on the topic - if you use them, plese cite me :-). 1) A.G.M. STROLLO; E. NAPOLI ",Improved PiN Diode Circuit Model with Automatic Parameter Extraction Technique" IEE PROCEEDINGS. CIRCUITS, DEVICES AND SYSTEMS, Vol.144, No.6, pp.329-334, 1997, doi:10.1049/ip-cds:19971487 2) A.G.M. STROLLO; E. NAPOLI ",Power rectifier model including self heating effects" MICROELECTRONICS RELIABILITY, Vol.38, No.12, pp.1899-1906, 1998, doi:10.1016/S0026-2714(98)00156-5 3) A.G.M. STROLLO; E. NAPOLI; L.FRATELLI; G.GIANNINI, 1997. Automatic Parameter Extraction Technique for a PiN Diode Circuit Model. DOI:10.1109/ICMEL.1997.625242. pp.269-272. In Proc. 21st International Conference on Microelectronics (MIEL'97) - ISBN:078033664X vol. 1, (1997), doi.: 10.1109/ICMEL.1997.625242 4) E. NAPOLI; A.G.M. STROLLO, 1998. A Dynamic Electro-thermal Model for Power PiN diode. pp.179-184. In Proc. 4th International Seminar on Power Semiconductors ISPS'98 - ISBN:8001018520, (1998).
The output LC filter has a slope of 12dB/octave, not 40dB/oct, correct? (maybe 40dB/decade) To tame the peaking effect (when RL is high, i.e. resonance), don't you want to something similar to a zobel network to flatten the driver impedance? I would like to use a 4-ch class D device (maybe from TI) and add an active crossover before the amplifier to build a bi-amp loudspeaker system. Is there any special consideration you would suggest when using class D amp to drive a tweeter directly?
Hello, very interesting . Very difficult to get reverse recovery model for diodes . Any place that I can find your Pin.lib or Pin-FR.lib model + this .asc simulation file ? Is this model also ok for hig power rectifiers ?
