Thanks for the great video. It is not common to find videos explaining how to design amplifiers with MOSFETs, in general you will find polarization analysis. To put things on the right side: when you check the value of VRD = 1/3VDD it is to confirm the voltage drop from the value of RD = 35k to ID 0.1mA, which results in VRD = 3.5V. Is correct? After all, with RD = 37.5k you get VRD = 3.75V which is close to 1/3VDD. And regarding the use of 1/2kn in the ID equation, in this case we have kn = k'n(W/L) and thus there is dependence on the MOSFET geometry. On the other hand, it is possible to use only k = ID(on)/(VGS(on) - VT)^2, where ID(on), VGS(on) and Vt are available in the datasheets.
I think it is clear from the context that K means kilo here. This is not a technical document or some sort of data sheet, just a video where I am explaining the design process. cool down.
Hello, Yes these are videos I am currently preparing for a course I am teaching in spring 2022. I am making them public so others can watch them too. I will be uploading more in the near future.
@@harishchintakunta8363 Thanx for your back, the way of your explanation is really cool. And thank you very much to share these valuable things here as freely. 1.Will you make some more videos about analog electronics? Or in which topics will you teach here? 2. Are you a Teaching Assistant, Dr or Assistant Prof. in a univ/college in the United States?
Hello Nandha, gm is typically calculated as kn x Vov, where kn is the device transconductance parameter, and Vov is the overdrive voltage. Note that Vov is determined by the DC biasing, so gm changes (can can be controlled) using the DC biasing.
Such a good video for those who need help with Pi. I made this fun and catchy song about Pi because I love math so much! ru-vid.com/video/%D0%B2%D0%B8%D0%B4%D0%B5%D0%BE-QxSAObrLyt0.html
