International Warsaw Invention Show IWIS 2022
Invention ID45
Title: Based Thin-Film Transistor Using a Multi-Layer Modulation Method
Short description: In this innovation, we used a sol-gel method with spin coating processes to fabricate a high-performance ZTO/SnO/ZTO thin film transistor (TFT). The ZTO film mainly serves as an electron accumulation layer and a diffusion protection layer to prevent the SnO film in the middle layer from diffusing into the gate insulation layer. The SnO film can increase the carrier concentration and provide additional carriers to the ZTO channel layer. The ZTO/SnO/ZTO TFT shows a high mobility, high ION/IOFF rat
National Yunlin University of Science & Technology,
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5 окт 2024