@@ELECTRONOOBS in your explanation ,with the circuit of Bootstrap the 24 volt is made with the load voltage 12 + the bootstrap capacitor 12 ,it is not 24 before turning on the MOSFET. Anyway nice video I able to learn something new here
Those of us who are his fans would buy it most likely. But people don't enjoy reading textbooks for the most part. Why would he focus his efforts on a textbook that would reach a very small audience when he can focus his attention on these shorter and easier to digest videos that reach a far wider audience? He makes more impact on his channel. If you're looking for textbooks go check out Jim Pytel's channel
Very well presented. I really enjoy the fundamentals. I had totally forgotten about bootstrapping and that would explain a problem I had recently. But I will use your advice and use a dedicated driver. Thank you.
Small note on P channel fets is that there still is a maximum voltage differential that the gate can have. So if vcc is like a 100V and you pull the gate to ground that could kill the fet
That puzzled me too, seems like almost nobody mentions it. When the mosfet opens, the potential at the source changes and is now 12V, and this adds to the already charged 12V of the capacitor, which now is electrically in series with the potential at the source, with the diode suddenly blocking. The 10K is not a pull-up resistor in the typical sense (from Vcc), but we can call it a bootstrap pull-up resistor as it provides higher gate voltage by the "higher rail", i.e. from the cap charged to Vcc in series with Vcc at the source as the mosfet opens.
Andrei, So first of all I think you did an excellent job of explaining exactly why a bootstrap is sometimes needed. I also liked how you took your time to fully explain some of the challenges. I like how you gave actual practical part numbers of MOSFETs that are commonly used. It was great how you gave an example of a boostrap circuit but then recommended we use a pre-built IC. That cuts out a lot of struggle. Finally I am grateful for how you recommended several projects you have built using the techniques shown so we have practical examples to go look at. This was a wonderful tutorial for a subject that can be a struggle to learn. Thank you for taking the time to put this together.
Can I use the FET driver to use an N-channel as a high-side On/Off switch ? (not for actual high-frequency switching - just straight DC to turn it on/off).
After lots of repeated watching clear my doubt of bootstrap, but still I want to know how to select the value of bootstrap resistance and capacitor,if you had already made any video previously please send the link from India ❤🙏
tìm hiểu mạch cầu H.so sánh PP NN với 4N, mosfit. IC lái Fet IR2104, 2184. Đọc DAta sheets. mạch lái Fet. VẼ mạch nguyên lý của 2104 và hiểu, nửa cầu H. nguyên lý bustap. vì sao dùng bustap để lái. điot có tác dụng gì, tất cả điều có tác dụng
Your comparison between N and P channel MOSFETs is no more up to date. Today you get an through hole N channel MOSFET with an Rdc of 1.5 mOhm for less than 5 USD. And for the same price you get a P channel MOSFET with an Rdc of 3 mOhm. So I have build a buck converter for 25 V / 200 A (5 kW) with 4 IPP120P04 in parallel without problems. The power dissipation of the MOSFETs was only 60 W. The use of boot-strapped N channel MOSFETs for high-power applications is also limited. The input capacity and the gate charge can be considerably high. 4 power MOSFETs in parallel can have a gate capacity of 60 to 100 nF, which needs to be supplied with a considerable amount of current if you need a switching time in the sub-µs range. At first you need a boot strap capacitor with at least 10 times the capacity of the input capacity. At second you need to perform a charge exchange within 100 to 500 ns. So the gate resistor must be kept small. Sometimes the internal gate contact has allready a resistance of several Ohms. And also the ESR of the capacitor is not zero. So the selection of devices with low gate line resistance and low-ESR capacitors can become very important. The charge exchange current can be in the order of 10 A or even more. The charge loss due to curren bypass is in the most cases not critical.
it's one of the best video about Bootstrap! but i have one problem. I use IR2111 and i don't know how to control H-bridge with two ir2111 and four Mosfet! PLEASE HELP ME! Can you explain me how to give the appropriate pulse for the right and left rotation of the motor to the IC? thx man 😉
Correct me if I am wrong, but 24V potential on the gate is from capacitor with potential difference of 12V, which was placed on the 12V "ground" potential. I was puzzled why doesn't capacitor just get discharged and realized that it's because no current can flow through it because he has opened circuit at that state (when the MOSFET is on)
Can you show the schematic of your full bridge driver? I am trying to control a 3-6V DC motor by PWM from a rasberry pi pico and i burned 4 ir2104 and the uC... I tried just a half bridge scheme for controlling in a single direction and failed. Maybe someone has some advice
What is the signal frequency the Pokit Meter supports? Can it do real time plotting of the signal as well. I want to buy a couple but would like these two questions answered. I have a friend in Pakistan I want to send one to. *The other one is for me*
At 9:14, VCC and the capacitor aren't in series. They dont add together, their positives are on the same node. This will still turn on the mosfet, but only to Vcc-Vth. The capacitor, diode, and 1k resistor are unnecessary.
How did you come to this conclusion? When the MOSFET is On the initial +12V on the capacitor is blocked by diode and thus cannot add an additional +12V to the load
Hi Electronoobs .. How can I use N channel MOSFET like Irfz44n to make 12v bulb flashing using just MOSFET and a resistor and a capacitor only is it possible with just 3 components ?
2:43 geeez man, may we recommend the tutorial, "how to mirror schematic components in altium" :P (edit: also, at 4:55, you won't be able to switch that P-ch if you connect it like that, moreover, it will blow due to internal diode shorting VDD to GND) (very good video by the way, kudos!)
Hi... I saw your old vedio about diy rf remot control... And is very happy .. Your explain is vary clear.. If I won't very long range. Can I using lora module. And what's module can I use... Please help me 🙏
The isolated packages of power-MOSFETs are sometimes nice but I prefer non-isolated packages, especially for harder heat transfer conditions. I use polycarbonate screws to fix them with a layer of 50 µm self-adhesive Mylar foil as interfiller between the transistor and its heat sink. If I need parallel electrical connection among the drains I use silver epoxy as Interfiller. Sometimes I also use 5 mm thick copper bars as heat spreaders and for electrical connection among the gates. Sometimes also in combination with Mylar foils between the heat spreaders and the heat sink. Sometimes the thermal optimization is more demanding than the electrial.
Retired here and tinkering in the garage. My forte is 60's technology, auto repair, welding, carpentry, appliance repair, etc. My yard is full of scrap and used parts I use in my builds. I saw the Silicon Valley go from peach orchard to high tech. My Godmother used to deliver late night tacos to Andy Groves when they burned the midnight oil. These days, I see so much discarded electronics plus all these videos on home builds. I wonder what useful electronics is going by my nose that I can salvage. Videos like this (and Rossmann) have started me on a new journey.
Just want to say a massive thank you for making this video. I'm in the middle of designing a motor controller and when I comes to the mosfet side of things it's become a nightmare trying to find appropriate transistors and drivers to match them. ¡Mucho aprecio!
Enhancement MOSFETs are normally off while depletion MOSFETs are normally on. Depletion MOSFETs are very rarely used and enhancement MOSFETs are used about 100% of the time.
Great video! (Previous comment: What is missing in the video is how people are using MOSFET without dedicated drivers. According to the information given here, they should not work. EDIT: or maybe I missed it. Sorry. And yes, I missed the point that N-channel is used as a replacement for P-channel to avoid overheating but then the voltage difference is an issue.)
Logic level n-channel as a low side switch, he touches on that. Watch a second time :) Then there's the issue of switching losses at high pwm frequencies due to the current limitations of gpios, that he didn't touch (to keep the video simple and quick, I suppose)
A great, very clear presentation, thanks! It occurs to me that the basic bootstrap circuit would be relatively slow-switching, because the gate capacitance would have to charge up through a total of 11k of resistance. So it wouldn’t be good for high switching frequencies, and would dissipate more power because it would spent more time between off and fully on. I guess the dedicated drivers have active circuitry in them to get around this, but I’m curious what the practical turn-on and turn-off times are with the simple “DIY” circuit. Anyway, it was a very clear explanation, thanks!
the capacitor is charged extremely fast over the diode, when the mos is off, as there is no resistance involved; in the beginning after powering it on, as the mos is off, the capacitor is charging (fast), until you turn it on first time; when the mos is on, the capacitor discharges very slow through the gate of the mos (nano/pico amps?) and through the reversal current of the diode (also nano/pico amps, so at most a micro amp is lost, or so); so, you NEED the "off" time, to charge the capacitor, you can not let it continuously in "on" state, because after a while, the capacitor will discharge enough to turn the mos to a "partially" off state, where it just dissipate the energy and possible kill your load (if supplying it with intermediary voltage can kill it); so, this is designed to work in a "pwm" environment, you can make the mos "off" continuously, static, but you need to make it "on" with pwm (say, between 85% and 99%, depending on your/load/needs); with this in mind, the "DIY" circuit is as fast as the integrated drivers, or even faster: with carefully tuned components you can get 30-500 ns switch time (the drivers have ~150, but also about 500ns dead time); mind that the drivers also need external capacitor and diode, however, the advantage of the drivers is the very low EMI (the "DIY" circuit will generate a lot of EMI in on state), the fact that you can command 2 channels and you can easily switch off both of the channels in the same time, and the safety of having a dead time in between, to ensure that both moses are not switched on in the same time (which can cause a short circuit and some fireworks in the room).
@@laurv8370 Thanks for the very detailed explanation! I understood the part about the circuit being designed for PWM applications, I was just wondering about how quickly the capacitance of the transistor’s gate could be charged (and therefore how quickly the voltage on the gate would rise), given that there was a resistor between the capacitor and the gate. 30-500ns answers that question. I expected it to be slower than a driver IC because the IC would have active circuitry to drive the gate, which would have much lower impedance. As you point out though, there will be a propagation delay through the IC, you still need the capacitor and resistor and the driver may have less of (or no) advantage for lower-power FETs, which would have lower gate capacitances. Thanks again for taking the time to give such a thorough answer!