Powerful Knowledge 7 - SIC power device reliability and robustness

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Modern Silicon Carbide power devices can offer leading edge performance in power electronic converters.
In this episode 7 of our 'Powerful Knowledge' series, Jose from Warwick University looks under the hood of modern silicon carbide power devices and talks about what drives their reliability.
#powerelectronics #stemeducation #netzero #knowledgeispower

Опубликовано:

11 сен 2024

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Комментарии : 5

@user-el9hy6yo6x 2 месяца назад

Thanks for your sharing. In the presentation, talking about the potential parasitic turn-on issue for the low side mosfet. Is it the same potential issue for high side mosfet in half bridge configuration? Thank you.

@ElectronicmindsUK 2 месяца назад

Thanks for your question and apologies for the delay in replying. Yes, the miller effect can induce parasitic turn on in both the low side and high side devices. The mechanism is the same. I hope you enjoy the rest of the content here.

@hosalazaheri3373 Год назад

Thank you for uploading this video. Could you please upload the other videos from the last years?

@ElectronicmindsUK Год назад

We are uploading all our videos over the course of the next few weeks. In this series, we still have quite a lot to come including magnetics design, simulation control theory and reliability