Pure genius and an absolute masterclass from the "God of Electronics". His way of building up the things along with why they are needed before telling that this is what we called as '---'(e.g MOSFET) is brilliant and creates enthusiasm in the person watching the video. He should deserve a prize for his way of teaching!!. Keep it up sir, you are doing a great job!!!. Love from India.
Thank you so much! Explained with perfection. Told every necessary detail. Now I want to learn it unlike in university where our professors teach us like we know everything already. I can't thank you enough!!
Engaging, informative, easy to understand and thought provoking…Never ever came accross such style of lecturing before….always thought of seeing you since Engineering days Prof. Razavi….your books are very popular among Engineering students community in India…..I am currently revisiting your RF Microelectronics text book’s 2nd edition…..thanks a lot for your contribution to the electronics World and for uploading these youtube videos….can’t thank enough to the uploader….Masterpiece!
the best lecturer. as my age is lesser than his experience you earned my respect mr razavi one word i want to say to you the best faculty i've ever seen in this generation.
I went through transistor lectures first in this Electronics 1 lecture series. Views decreased as the transistor lectures went by. Lec 28 is the last lecture on transistors. Suddenly in the middle of the lecture series, this Lec 29 has much higher views than Lec 28. It feels like new students have joined us like in real life in a university class 😄😄
sir please upload electronics 2 lecture .we love your lecture ,it is super ,most of my confusion get clear by your videos .sir please upload as soon as possible thanks so much sir
This is kind of classes is the reason why I don't like our University Teachers and curriculam. All that is important in our curriculam is completing syllabus in light speed, give assigments and take exams, and grades that you will get only memorising with out deep understanding.
at 29:42 he compared B to source but that would mean source is at lower potential than drain ,also in next video we heavily use the term Vgs and say its V gate source,can someone tell how if sir have already said mosfet are symmetric,shouldn't its be V gate substrate?
if charge goes away from one type of material to other,then only ions will form.but here holes are move away from ptype material itself.then how ion will form here?
Hello prof razavi I have a question please is there a standard certificate of electronic circuit design only not related to any college and if it existed is there an online test for it
i did not understand why source and drain are highly doped n type materials. if it is for making good contact between metals and material then my question is in case of PMOS we use P+ type materials for source and drain. I want to know the noble cause for using them ?/ What i thought is depending on the channel source and drain are doped with corresponding materials for the smooth flow of charge carriers is that correct or any answer?
Yea UA right.....the thing is highly doped in the sense...would create more free charges ...electrons for n+ and holes for p+ thus making a better channel to be formed btw source and drain.. :)
The contact is so small and we want to flow high(relative) current through the source so we need to put either a wide connection to the source and drain or we can make a higher dopping
in 52 .50 we assume that vd>vs; and vs is ground. what if vs > vd and vd is grounded.is the result would be current will flow from drain to source like pmos. can anyone explain this
For a textbook-use MOS, I think the answer would be YES! After all, Observation 2 at the bottem right of the previous page says this device is SYMMETRIC.
17:50 It does not follow from Charge increasing that Charge Density increases. If the volume/area/length of the distribution of the Charge also increases then the Charge Density could remain the same or even diminish. Charge Density isn't defined, so that's very unhelpful. Wasted a lot of time trying to figure out what was going on.
But the volume, area and length are constant. Free electron density increases in the are between source and drain because that's the point where we apply Vg. Charge density is the number of charged per unit volume. Basically, in the channel connecting S and D, more free elections gather this reducing resistance of the channel which in turn increases current
Is there any particular reason to NOT draw a dependent source as a diamond? I have always drawn it that way, and it doesn't seem any more awkward than drawing a circle.
These are not free e s exactly. These are minority carrier present in ptype semi conductor accumulated at the cap plate due to inversion forming a channel
