Тёмный

Schottky Diode Part 2 - Depletion Region and Capacitance 

Jordan Louis Edmunds
Подписаться 62 тыс.
Просмотров 32 тыс.
50% 1

Опубликовано:

 

16 окт 2024

Поделиться:

Ссылка:

Скачать:

Готовим ссылку...

Добавить в:

Мой плейлист
Посмотреть позже
Комментарии : 25   
@jasoncornell2474
@jasoncornell2474 3 года назад
NOOOOO... I need part 3. Great explanations but part 3 sounded VERY useful. Explaining the V-I Curve.
@saramillan4400
@saramillan4400 3 года назад
I wish my professor explained this well - I'm learning more from your videos than from class thank you so much for posting these!
@anantjain1108
@anantjain1108 2 года назад
++ plus plus * infinity
@AvigailKolobov
@AvigailKolobov 5 лет назад
nice videos, you made it very easy to understand. Thank you!
@JordanEdmundsEECS
@JordanEdmundsEECS 5 лет назад
Thanks :)
@asawirshakeebasmaail5114
@asawirshakeebasmaail5114 2 года назад
Thnx so much , u can't imagine how helpful this video is U saved my life الله يعطيك العافية
@ramiromillanfraile7399
@ramiromillanfraile7399 4 года назад
Very good video!! This is going to help me for my exam, thank you!
@CannonballCircuit
@CannonballCircuit 6 месяцев назад
Hey Jordan, I thought that the Fermi levels were in the forbidden zone between the valence and conduction bands, meaning that no electrons could be present there at steady state?
@karlc1980
@karlc1980 5 лет назад
Thank you for the video. Around minute 1 you show that electrons will move from the n-type semi-conductor to the metal through diffusion, until E_F's become equal. Will this in general happen with any n-type semi-conductor/metal combination, or will this only work in certain rare cases? I seem to understand that this happens exactly when E_F in the semiconductor, before contact, is higher than E_F in the metal (so actually E0-EF,metal > E0-EF,semic.). So could it just as well happen that the E_F initially was lower in the n-type semiconductor than in the metal? Then the electrons would flow from the metal to the semi-conductor?
@JordanEdmundsEECS
@JordanEdmundsEECS 5 лет назад
Yup, exactly. This actually works not only for any metal/semiconductor combination, but even for metal/fluid interfaces and arbitrary semiconductor/semiconductor interfaces. It’s super powerful. Which Fermi level is higher dictates where electrons flow from.
@dannchan00
@dannchan00 4 года назад
May I know which video is the continuation to this video, tq
@orgoon7697
@orgoon7697 2 года назад
Extremly helpful, thank you
@williamp3677
@williamp3677 3 года назад
Is there a part 3 ?
@jasoncornell2474
@jasoncornell2474 3 года назад
Yeah. He said "in the next part"... but I can't find it. I need help understanding the I/V curves.
@matthewchau8907
@matthewchau8907 Год назад
So in a n-type, the metal's work function has to be greater than semiconductor's? What happens when the work function of the semiconductor is larger?
@usdesk
@usdesk Год назад
The band gap bending will be inverted. This happens when you join a p-type semicondcutor.
@renatoberaldo2335
@renatoberaldo2335 2 года назад
how about the characterist CV curve of schottky contact.. do you have one ?
@musg5336
@musg5336 4 года назад
Hello Jordan. Hope all is well with you. I have a question with regards to the capacitance. How is the thickness just the depletion region. The depletion region consists of positively charged ions and the rest of the distance on the n side is are the electrons. The width should be the distance between the two right? If yes, the how is it xn.
@JordanEdmundsEECS
@JordanEdmundsEECS 4 года назад
The relevant distance is the separation between your two ‘seas’ of *mobile* charge carriers. There are a bunch of mobile charge carriers in the metal (and there is a ‘depletion region’ in the metal, but it’s a fraction of an atomic length), and there are a bunch of mobile charge carriers outside your depletion region, which has length xn. The separation between these two determines your capacitance. You just treat the ions as if they are a dielectric, because they cannot move to conduct current.
@concernedhuman1518
@concernedhuman1518 3 года назад
@@JordanEdmundsEECS Hello Jordan. Nice video. I have a question: why do we use an AC voltage with mV amplitude while performing C-V measurements in Schottky or PN junctions? Thanks and regards!
@prashantupadhyay5110
@prashantupadhyay5110 4 года назад
Around 5 30 min, u talked about charge nuetrality. Can u talk about it more charge nuetrality level and Fermi level
@renatoberaldo2335
@renatoberaldo2335 3 года назад
This redcuction occurs at interface ??
@ShailendraPandeyOwm
@ShailendraPandeyOwm 2 года назад
Thanks sir
@ashlynnundlall
@ashlynnundlall 4 года назад
How do we use figure 9.3 in Neaman ? How do you get Vbi from it ? They say look for the intercept but I don't know what those arrows mean ?
@usdesk
@usdesk Год назад
Where is the part 3 class .?
Далее
Law of the Junction
11:31
Просмотров 20 тыс.
Schottky Diode Part 1 - Band Diagram
11:32
Просмотров 70 тыс.
Это было очень близко...
00:10
Просмотров 3,1 млн
PN Junction Example: Depletion Width, E-Field
13:59
Просмотров 32 тыс.
Schottky Junction and Ohmic Contacts
56:21
Просмотров 157 тыс.
MOS Capacitor Explained
13:21
Просмотров 111 тыс.
Schottky Barriers, Lecture 43
16:59
Просмотров 17 тыс.
PN Junction Introduction
9:59
Просмотров 142 тыс.
PN Junction Diode Introduction
13:07
Просмотров 39 тыс.
PN Junction Depletion Width
13:56
Просмотров 50 тыс.
MOSFET Band Diagram Explained
9:38
Просмотров 80 тыс.
6.1 Schottky barrier in metal-semiconductor junction
30:00
Это было очень близко...
00:10
Просмотров 3,1 млн