"**UT2311G-AE3-R-VB**
*Brand:* VBsemi
*Parameters:*
Package type: SOT23
Channel type: P-Channel
Maximum withstand voltage: -30V
Maximum drain current: -5.6A
On-state resistance (RDS(ON)): 47mΩ @ VGS=10V, VGS=20V
Threshold voltage (Vth): -1V
*Application introduction:*
UT2311G-AE3-R-VB is a P-Channel power MOSFET packaged in SOT23. Its design features include low on-state resistance and suitability for load switching and power management applications.
**Detailed parameter description: **
1. **Package Type: ** SOT23, which is a small surface mount package suitable for dense circuit board design.
2. **Channel Type: ** P-Channel, indicating that this is a P-channel MOSFET.
3. **Maximum Drain-Source Voltage: ** -30V, which is the maximum drain voltage that the device can withstand.
4. **Maximum Drain Current: ** -5.6A, indicating the maximum drain current that can pass.
5. **On-state resistance (RDS(ON)): ** 47mΩ @ VGS=10V, VGS=20V, indicating the maximum value of the on-state resistance under a given gate-source voltage.
6. **Threshold Voltage: ** -1V, which is the gate-source voltage at which the device starts to conduct.
*Application Areas:*
1. *Load Switching:* Applicable to load switching circuits to provide reliable switching control, such as load switches for power management units (PMUs).
2. *Power Management Modules:* Can be used to build power management modules such as power switches and current controllers.
*Module Application Examples:*
1. *Power Switching Module:* UT2311G-AE3-R-VB can be used to design power switching modules, which are widely used in portable devices and power management systems.
2. *Power Management Unit (PMU):* As part of the PMU, it is used to control the switching of the power supply and provide efficient power consumption management.
Please note that the above information is only a general explanation and application suggestion for the given parameters. The circuit requirements and system specifications need to be considered in the specific design."
5 окт 2024
