This could be condensed into 7 minute video. Same things repeated three times. Funny how some youtube videos are higher quality than university lectures
@@HabibAhmadGatech thank you very Dr. i need extract breakdown voltage and temperature of mosfet modeling in atlas. i faced difficult to find it in your videos. would you mind to copy the links of your video to facilitate the search ?
Thank you for video. I have learned lot from it Sir, i am working on HEMT. Can you please mention what are meshing values range for material interface. You have mentioned denser meshing is need.
Thank you for video. I have learned lot from it Sir, i am working on HEMT. Can you please mention what are meshing values range for material interface. You have mentioned denser meshing is need.
Sir, i have some queries. 1. where Trim data saves, which format, how to open it 2. Can TRIM give the information about impact of high energy ion irradiation such as swift heavy ion irradiation, on materials?
To save SRIM TRIM data, follow these steps: 1. Run the TRIM Simulation: Open SRIM and configure the simulation settings. Run TRIM after setting up the material, ion type, and energy. 2. Save TRIM Data to a File: Once the TRIM simulation completes, you can save the results in several formats. Use the "Save" option in the TRIM output window, where you can save different types of data such as: Ion distribution Recoil distribution Phonon or electronic energy losses Damage profile You can typically choose a file format like .txt or .csv. 3. Automatic Saving of Data: In SRIM’s "TRIM settings" window, there is an option to enable automatic saving of results. Ensure this is checked before running the simulation if you want it to automatically save output files after the simulation. 4. Locate the Saved Files: By default, the files are saved in the same directory as the SRIM program or in a user-specified directory during the setup process. You can then open these files in a text editor, spreadsheet, or graphing software to analyze and visualize the results.
Yes, SRIM (Stopping and Range of Ions in Matter), specifically its TRIM module, can simulate the impact of high-energy ion irradiation on materials. However, there are limitations based on the energy range and the types of interactions it can accurately model. Key Features of SRIM TRIM for High-Energy Ion Irradiation: 1. Energy Range: SRIM can simulate ions in the energy range from a few keV to several GeV, which covers most high-energy ion irradiation scenarios. 2. Material Interactions: Ion Penetration: TRIM can predict how deep ions will penetrate into a target material based on the ion's energy, mass, and charge, as well as the material's properties. Energy Loss: It calculates the stopping power (energy loss) of the ion as it passes through the material, both through nuclear and electronic interactions. Displacement and Damage: It can simulate the number of displaced atoms (displacement per atom, or dpa) and provide insight into the damage profile in the material caused by ion impact.
Thanks for the compliment! Perovskite solar cells have achieved efficiencies close to 30% in tandem configurations. Specifically, tandem solar cells combining perovskites with other materials, such as silicon, have reached certified power conversion efficiencies of around 32.5% in research settings. The standalone single-junction perovskite solar cells have reached efficiencies in the range of 25-26% in laboratory conditions, but not 30% yet. As for hybrid perovskite solar cells reaching 50% efficiency, that level has not been attained. While theoretical predictions suggest that hybrid tandem configurations (combining different materials with perovskites) could potentially reach efficiencies above 40-45%, achieving 50% remains a significant technical challenge due to losses from recombination, non-ideal bandgaps, and other factors.
@@HabibAhmadGatech Regard to your suggestion about some losses, I did the simulation the result is the same as your answer 40-45%, you are totally right!!!! WoW, Have you already develop the right structure?
Thank you. You can use -overlay of all different I-V characteristics as function of temperature instead of using several windows of duckbuild. Using only one window of silvaco-tcad and display all I-V-T characteristics by using -overlay.
hi sir , your lectures are highly informative and helpful . Thanks for the effort . I have a doubt as i am new to silvaco , i would be grateful for your response . my ques :difference between "lat.temp" and "model temp" command in silvaco???
lat.temp sets the physical temperature of the lattice, while model temp sets the evaluation temperature for the material models. Impact on Simulation: Changing lat.temp affects phonon interactions and heat generation. Changing model temp affects how the software evaluates temperature-dependent models like mobility and recombination. Typical Usage: Use lat.temp when simulating devices under actual thermal conditions (e.g., heating effects). Use model temp to study the effect of temperature on device behavior without changing the actual thermal environment. Understanding the distinction is crucial for accurately modeling thermal effects in devices, especially in cases where the lattice and model temperatures might differ due to external thermal conditions or specific simulation scenarios.
SCAPS has only limited materials in the C...Program files....Scaps...def folder. SCAPS-1D doesn’t come with an extensive built-in materials library, but you can find or create .def files for various materials in the following ways: 1. Official SCAPS Website: Check the SCAPS-1D website for any official updates or additional materials files that can be used in simulations. Sometimes example files are provided that contain material definitions for solar cells like CIGS, CdTe, etc. 2. Research Papers: Many researchers share their SCAPS .def files in their publications or supplementary materials. Searching for papers on solar cells with similar material systems (e.g., InGaP, GaAs) could yield usable parameter sets. 3. Online Forums and Research Groups: Platforms like ResearchGate, or specific solar cell research groups, often have researchers willing to share SCAPS files. 4. User-Created Libraries: Some researchers upload their .def files in repositories like GitHub. You can search for these by looking for SCAPS material libraries or tandem solar cell projects. 5. Create Your Own Library: If you have access to the necessary parameters (like bandgap, electron affinity, carrier mobilities, etc.) from material datasheets or research, you can manually input these values into SCAPS and create your own material definitions.
Hello Dr. Habib Ahmad, I have just completed my engineering thesis defense with a TCAD simulation of a NiO/Ga2O3 MOSFET. I want to thank you for your great support in Silvaco TCAD knowledge, Origin, increasing image resolution in PPT, report layout, and more. I will definitely share your videos with future students who are studying TCAD simulation. I hope you can release more videos on SEM, FTIR, XRD, and UV-Vis analysis. A big fan of yours. Thank you!
Thank you so much for your kind words. I'm really glad my RU-vid content helped with your research. I definitely plan to post videos on the characterization techniques you mentioned. I appreciate the follow up. 😊
"Such a clear and concise explanation! I had been struggling with understanding this topic, but your video clarified everything. Keep up the amazing work!"
Thank you very much for your helpful tutorial video. How is the intermediate layer considered in the simulation of a tandem solar cell? Specifically in the above video, how are layers 5 and 6 considered
That's an excellent question. You are talking about the tunnel junctions. I don't know a direct solution for this yet. One way to get around it is to use a filtered spectrum. I'd highly recommend using Silvaco TCAD simulation for tandem solar cells. I already posted another video on this.
Calibration in Silvaco TCAD simulation involves adjusting simulation parameters to ensure that the simulated results closely match experimental or reference data. Here's a step-by-step guide to performing calibration in Silvaco TCAD: 1. Select the Device or Process to Calibrate Identify the specific device or process that requires calibration, such as a MOSFET, solar cell, or diode. Gather experimental data or reference results that you will use for comparison. 2. Identify Key Parameters Material properties (e.g., bandgap, mobility, lifetime) Doping concentrations (acceptor/donor levels) Interface parameters (interface traps, recombination velocities) Defect parameters (trap density, activation energies) Model parameters (e.g., Shockley-Read-Hall (SRH) recombination, mobility models, impact ionization coefficients) 3. Run Initial Simulation Set up your device or process simulation in the DeckBuild environment with default or estimated parameters. Run the simulation and note the key output parameters (e.g., I-V characteristics, capacitance-voltage (C-V) characteristics, quantum efficiency, etc.). 4. Compare with Experimental Data Plot the simulated results against the experimental or reference data. Note discrepancies in parameters like current, voltage, or charge distribution. 5. Adjust Parameters Based on the discrepancies, adjust the relevant material or model parameters: Mobility models: Adjust low-field or high-field mobility to better match the current behavior. Recombination parameters: Modify SRH recombination lifetimes or surface recombination velocities to match minority carrier lifetimes. Doping profiles: Fine-tune the doping concentrations and profiles for better match with experimental conditions. Temperature: Ensure that temperature settings in the simulation match the experimental environment. 6. Iterative Simulation Re-run the simulation after adjusting the parameters. Continue comparing the results with the experimental data, and repeat the process of adjusting parameters iteratively until the simulated and experimental results are in close agreement. 7. Advanced Calibration Optical calibration (for photonic devices): Adjust the absorption coefficient, quantum efficiency, and other optical parameters. Thermal effects: Include thermal models and adjust thermal conductivity or heat generation to match temperature-dependent behaviors. Quantum effects: For small-scale devices, incorporate quantum models like quantum confinement or tunneling effects. 8. Validate the Calibration Once the simulation matches the experimental data, run simulations under different conditions (e.g., varying temperature, bias) to check if the calibration holds. If the calibrated parameters work across multiple test cases, the calibration is considered valid. 9. Document and Save the Calibration Once calibration is complete, document the adjusted parameters, models used, and the comparison results. Save the calibrated simulation deck for future reference or use. By following this procedure, you can ensure that your Silvaco TCAD simulations produce realistic and reliable results.
Sir I followed your example for perovskite solar cell in scaps 1D but I am getting convergence failure at lambda = 360.00m and QE calculation cut at lambda =350.00 nm . Could you please help me in figuring out this error
@@BintiIslam It's a different version than the one I simulated the structure on. Others have faced a similar issue. Try playing around with the material properties.
Dear sir, I have been struggling with single QW LEDs in silvaco. The problem is that the IQE of a single QW LED is nearly 100%. Please video on a single QW LED in silvaco.
"Such a clear and concise explanation! I had been struggling with understanding this topic, but your video clarified everything. Keep up the amazing work!"
