Gallium Arsenide (GaAs) offers inherent advantages for developing transistors and all passive devices needed for designing and producing RF and microwave or millimetre waves MMICs (Microwave Monolithic Integrated Circuits). Pseudomorphic High-Electron-Mobility-Transistors
(pHEMTs) can deliver unbeatable performances both for low noise and power needs to address different markets.
During this webinar, Dr. Eric Leclerc (UMS) will describe how technologies are optimized physically at device level to fulfil the very different requirements needed to address low noise performance or high RF power generation. We will discuss how the MMICs issued from these different technologies are used for different markets such as Space, Automotive, ISM, and Telecommunication.
Eric will also zoom in on UMS’ GaAs pHEMT process available through EUROPRACTICE. This technology is optimized for the production of low noise, wideband and medium power amplifier MMICs, enabling design of various devices, such as amplifiers, automotive radars, imaging sensors,
and optical fibre communication.
31 янв 2024
