S6-E3_imec MPW services - Part 3 - GaN-on-SOI technology for highly integrated GANICs 

In this third webinar in the series, Dr. Urmimala Chatterjee and Maritza Tangarife Ortiz from imec will take you to a deep dive into imec’s GaN-on-SOI technology.
It is well known that GaN technology can drive the high frequency operation for power circuits beyond today’s limit. However, this extremely good frequency capability introduces some challenges to operate the transistor efficiently. Although discrete GaN devices today dominate the GaN market, monolithically integrated GaN power IC fully utilizes the fast-switching capability of GaN technology by reducing the parasitic and ringing, which enables a fast efficient switching operation.
The main goal of this webinar is to introduce the details of monolithically integrated GANICs in all GaN technology. It also discusses technological and circuit level challenges of monolithic integration in GaN technology. One of the major problems is the back-gating effect (BGE) that highly impacts the performance of an integrated half-bridge (HB) switch. As a potential solution
imec implements it on GaN-on-SOI (silicon on insulator) substrate with trench isolation to fully isolate the HEMTs as well as their respective silicon device layers that are cut off horizontally by a trench.

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