Watch this video to know more about the formation of P-N junction diode, its V-I characteristics and P-N junction diode breakdown mechanism. Department: Electronic Engineering Subject: Electronic Devices Year-1
Acceptable overall video. It early mentions some relevant semiconductor devices. It involves a mixture of correct and incidental incorrect information, audio, and animation. A video of pros with some cons.
thank you for the video but are n't the break down reverse voltages a bit high i would defenetly take of a zero from each material breakdown reverse voltage value
The animations are good. i want to learn these animations. can you help me how to learn this adobe animation software? Are there any courses are required to do animations?
In this video, we have explained V I Characteristics of a P N Diode & Breakdown Mechanisms [Year-1]. Under forward bias, the movement of charge carriers in a semiconductor caused by an electric field produces a drift current. Holes move in the direction of the electric field, whereas electrons move in the opposite direction. So the current flow due to the charge carriers is the drift current. Diffusion current is the movement of holes and electrons from high concentration areas where they are the majority carrier to low concentration areas where they become minority carriers.
The potential barrier can never be made zero volts. It cannot disappear. The forward bias voltages mentioned are not correct. Please refer to the books in this reply. What is a pn junction ? A pn junction allows current in one direction only. It blocks current in the reverse direction. When a pn junction is formed, a potential barrier designated Vo comes into existence and is typically around 0.6 to 0.7 volts for silicon junctions. When the barrier whose Vo is 0.7 volts is disturbed by applying a forward bias of say, 0.6 volts, the current increases and the increase becomes steep for small increments of the forward bias value a little greater than 0.68 volts. Large currents are observed when the forward bias is 0.69 volts which is closer to the barrier voltage of 0.7 volts. The forward bias can never exceed the potential barrier voltage nor can it bring the barrier down to zero volts. That is the reason you seldom see current vs volt graphs of pn junction diodes beyond a volt or so. How does the bias remain less than the barrier in an operational diode? The voltage bias applied drops in the bulk neutral regions of the diode. The current in a forward bias adjusts to fulfill the conservation of current law and the rate of recombination. A detailed description of the pn junction with a distinct approach using surface charges, alignment of Fermi levels, creation of the barrier, the distinct processes of diffusion, drift, recombination and the influence of the electric field on the energies of electrons is provided in the following textbooks. Electrostatics and circuits belong to one science and not two, that of electricity and magnetism. To know how they are unified visit this link matterandinteractions.org/articles-talks/ and view the article 'A unified treatment of electrostatics and circuits. B. Sherwood and R. Chabay, unpublished. (1999)' pdf. For a live demonstration of surface charge and its effects in circuits visit ru-vid.com/video/%D0%B2%D0%B8%D0%B4%D0%B5%D0%BE-U7RLg-691eQ.html For a detailed discussion of surface charge, coulomb's law, electric fields, fields of dipoles and other charge configurations, and parallel plates, and a distinct approach using the surface charge concept in the study of advanced topics of capacitance, currents, conservation of charge, conservation of current, superposition of fields, superposition of potential, simple dc circuit, magnetic fields, magnetic fields of a current element, straight wire, current loop, solenoids, biot-savart law, voltage, voltage source, difference between e.m.f. and potential difference, ideal voltage sources, resistors, how current branches in a parallel circuit, capacitors, inductors, Faraday's law, inductance, ac circuits, transmission lines, Lorentz Force law, motors, generators, p-n junction diodes, electromagnetic waves, antennas and radiation, new electrodynamic theories on the nature of the electric field, see "Electric and Magnetic Interactions" by Chabay and Sherwood www.matterandinteractions.org or Fundamentals of electric theory and circuits by Sridhar Chitta www.wileyindia.com/fundamentals-of-electric-theory-and-circuits.html There is a "look inside" feature in the amazon.com webpage of the book "Fundamentals of electric theory and circuits" by Sridhar Chitta with a few pages of Chapter 1 which may be viewed and also which you may swipe left or press < icon to view the foreword, preface and Table of Contents. The contents of the above book by Sridhar Chitta, make a distinct unified approach to electrostatics and a few advanced circuits like coupling signals to amplifiers, lending precision and clarity to the topics which is not found in most text books. The book comes alongwith a CD with animated power point presentations for all chapters and voltage regulator, RC phase shift oscillators and differential amplifiers included additionally. For a lecture by Prof Ruth Chabay on surface charge in a simple dc circuit visit ru-vid.com/video/%D0%B2%D0%B8%D0%B4%D0%B5%D0%BE--7W294N_Hkk.html There is a full set of lectures beginning lecture 13 here on surface charges, electric fields, simple circuits, capacitance, inductance, faraday's law, motional emf, magnetic forces and more topics here matterandinteractions.org/videos/EM.html
The potential barrier can never be made zero volts. It cannot disappear. The forward bias voltages mentioned are not correct. Please refer to the books in this reply. What is a pn junction ? A pn junction allows current in one direction only. It blocks current in the reverse direction. When a pn junction is formed, a potential barrier designated Vo comes into existence and is typically around 0.6 to 0.7 volts for silicon junctions. When the barrier whose Vo is 0.7 volts is disturbed by applying a forward bias of say, 0.6 volts, the current increases and the increase becomes steep for small increments of the forward bias value a little greater than 0.68 volts. Large currents are observed when the forward bias is 0.69 volts which is closer to the barrier voltage of 0.7 volts. The forward bias can never exceed the potential barrier voltage nor can it bring the barrier down to zero volts. That is the reason you seldom see current vs volt graphs of pn junction diodes beyond a volt or so. How does the bias remain less than the barrier in an operational diode? The voltage bias applied drops in the bulk neutral regions of the diode. The current in a forward bias adjusts to fulfill the conservation of current law and the rate of recombination. A detailed description of the pn junction with a distinct approach using surface charges, alignment of Fermi levels, creation of the barrier, the distinct processes of diffusion, drift, recombination and the influence of the electric field on the energies of electrons is provided in the following textbooks. Electrostatics and circuits belong to one science and not two, that of electricity and magnetism. To know how they are unified visit this link matterandinteractions.org/articles-talks/ and view the article 'A unified treatment of electrostatics and circuits. B. Sherwood and R. Chabay, unpublished. (1999)' pdf. For a live demonstration of surface charge and its effects in circuits visit ru-vid.com/video/%D0%B2%D0%B8%D0%B4%D0%B5%D0%BE-U7RLg-691eQ.html For a detailed discussion of surface charge, coulomb's law, electric fields, fields of dipoles and other charge configurations, and parallel plates, and a distinct approach using the surface charge concept in the study of advanced topics of capacitance, currents, conservation of charge, conservation of current, superposition of fields, superposition of potential, simple dc circuit, magnetic fields, magnetic fields of a current element, straight wire, current loop, solenoids, biot-savart law, voltage, voltage source, difference between e.m.f. and potential difference, ideal voltage sources, resistors, how current branches in a parallel circuit, capacitors, inductors, Faraday's law, inductance, ac circuits, transmission lines, Lorentz Force law, motors, generators, p-n junction diodes, electromagnetic waves, antennas and radiation, new electrodynamic theories on the nature of the electric field, see "Electric and Magnetic Interactions" by Chabay and Sherwood www.matterandinteractions.org or Fundamentals of electric theory and circuits by Sridhar Chitta www.wileyindia.com/fundamentals-of-electric-theory-and-circuits.html There is a "look inside" feature in the amazon.com webpage of the book "Fundamentals of electric theory and circuits" by Sridhar Chitta with a few pages of Chapter 1 which may be viewed and also which you may swipe left or press < icon to view the foreword, preface and Table of Contents. The contents of the above book by Sridhar Chitta, make a distinct unified approach to electrostatics and a few advanced circuits like coupling signals to amplifiers, lending precision and clarity to the topics which is not found in most text books. The book comes alongwith a CD with animated power point presentations for all chapters and voltage regulator, RC phase shift oscillators and differential amplifiers included additionally. For a lecture by Prof Ruth Chabay on surface charge in a simple dc circuit visit ru-vid.com/video/%D0%B2%D0%B8%D0%B4%D0%B5%D0%BE--7W294N_Hkk.html There is a full set of lectures beginning lecture 13 here on surface charges, electric fields, simple circuits, capacitance, inductance, faraday's law, motional emf, magnetic forces and more topics here matterandinteractions.org/videos/EM.html
Trinath hi, In the mentioned time 0.44, we are talking about extrinsic semiconductor. When we add impurities to the intrinsic semiconductor, the semiconductor becomes extrinsic and the conductivity will increase. This process is called doping. Hence, at the mentioned time, the semiconductor is intrinsic.
Thanks for the clarification...Statement at 0:44 seems incomplete.. Statement, "Extrinsic semiconductors are made from Intrinsic semiconductors that are doped" gives more clarity..
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