This circuit simulation shows a simple method for implementing a high-frequency resonant gate drive. The primary goal is to significantly reduce current stress on the gate drive switches. Features include high MOSFET saturation, less-than-50% output duty cycle, and zero-current switching (ZCS) on on all transitions of the gate drive switches.
NOTE: Capacitor and inductor values used in the simulation are impractically large, simply for the purpose of analyzing the circuit function at low frequency. A real-life implementation will require the selection of appropriately sized components based on the desired resonant frequency.
10 фев 2015