25 Gate Drivers | Power Electronics

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Basics of Power Electronics - Walid Issa
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thermal management,thermal,power electronics,switching losses,ltspice, walid issa, power diodes

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26 июл 2024

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Комментарии : 69

@FateGathersStudios 2 года назад

out of all the stuff out there, this is one of the best..

@amilahashantechnology3597 Год назад

The part about the high side driving capacitor charging is super clear, thank you very much

@fm-maintenance436 2 года назад

Thank you, engineer Walid. Switching to English is a qualitative leap, even for your followers, and I am one of them

@VedafoneYT 3 года назад

Thank you for your efforts to explain these circuits and I hope to explain more advanced and complicated circuits driving IGBTs by push-pull method

@amaurybetancourt4837 23 дня назад

Thank you, this video is very helpful, and your explanations make accessible these complex topics.

@alocin110 Год назад

Thank you Walid. Very nice video and discussion on various approach for MOSFET driver. I liked your video. Keep up the good sharing.

@keen2461 2 месяца назад

What an excellent educational video! Thank you.

@ionix2000 2 месяца назад

Very well done video. Thank you for the explanation!

@sentient1640 8 месяцев назад

wow, thanks a lot mr walid. learned a lot today .

@abdelhakimhassnaoui2297 Месяц назад

تحياتي استاذي وليد عيسى الله يجعلها من ميزان حسناتك

@cricketanalystanddailyfrau4063 2 года назад

Explained very well . Cover ... All the things and points of boot strap circuit.

@fifaham 2 года назад

Very good explanation and well done. Some videos on RU-vid spend 20+ mins explaning what you explained in few mins only.

@issaalaji3756 2 года назад

Thank you sir...your lectures are very useful

@hammasouissi4110 3 года назад

Thank you for the explanation👍👍👍

@mand6029 Год назад

thank you for this video

@dancoz5477 3 года назад

Bon video. Félicitation. Choucran.

@gayandesilva3180 3 месяца назад

What a great lecture... Thank You...

@q12x 2 года назад

Excellent explanation !

@mohamedsub7023 3 года назад

Thank u my dear very very useful lectures in power electronic

@andykay479 8 месяцев назад

Very helpful video thank you

@delifisek9680 2 года назад

thank you my friend for your help

@MD-py2de 2 года назад

Excellent Explanation

@abdulkadirmuhendis2272 2 года назад

perfect !

@arunkumarcr9496 2 года назад

Thank you Sir

@gkdresden Месяц назад

9:57 you can use the 1EDIxxI12AF and / or 1EDIxxN12A high side gate driver ICs which have an integrated transformer coupling which can source or sink up to 10 A and can operate up to a frequency of 1 MHz provided you don't exceed their power dissipation limit. I have used them in a buck converter to control a a parallel array of NMOS transistors to deliver 200 A at 30 V, with just a 20 to 30 W of power dissipation in the power switch.

@mohammedtarifi4569 3 года назад

Really you are beloved man and nice to follow you Great Job

@WalidIssaPlusE 3 года назад

Thanks and welcome

@ismailansi8482 Год назад

Well done 👏, I don't know why i keep figuring out my problems solution lately, actually I have tried to control 70N06L Mosfets with an arduino and whenever the drain current reaches 4Amps , the mosfets temperature rise up crazy.

@dj1encore 2 года назад

Thanks

@yahoobolt 2 года назад

Good explain

@gvish007 Год назад

नमस्कार.Nice video👍

@vertex1029 2 года назад

صح لسانك

@NKumar318 2 года назад

Rightly explained, good for me to understand some basics befor going to hardware. The bootstrap capacitor I am always confused with, you explained it very well. Can we use the same driver for 50A and 100A switches. How to understand proper source and sink current requirement of a switch.

@kleetus92 2 года назад

Typically the manufacturer of the transistor will specify what range of gate resistance they want with any particular gate voltages.

@avinashmaurya8381 3 года назад

Very Informative. Thanks. I want if I have to use optocoupler like TLP 250 and I have to use it to make H bridge inverter with R load. Which configuration is used for it low or high side.Please tell Signal will be given by arduino connected with MATLAB.

@raphaelcoti692 Год назад

Hi, Your high side switch is a solution. However you can't use it with a lot of power because your 2 MOSFETs (that are the drivers) will be closed before the power mosfet simply because of the fall time of this one. What will happen is a short circuit with S2, the power MOSFET and S2 will see a huge current passing through them and, if you have just little bit of inductance in your circuit when the power switch begin to open a huge spike will occur destroying it (if the current doesn't have already). So to me this solution isn't viable for long time use or power electronic and speed. Nevertheless your video was very interresting thanks.

@DisorderedArray 8 месяцев назад

WRT the totem pole mosFET arrangement - if both mosFETs have to have their gate driver by the same signal, is there a way to use passive components to introduce a deadtime?

@eng.reagan9540 2 года назад

How can you connect multiple MOSFETs (x10) in an array format for a high-side driving topology?

@democracyforall 2 месяца назад

can we use a coil, since the field goes up and down??

@qaziqazi9727 2 года назад

Good explanation

@WalidIssaPlusE 2 года назад

Thanks and welcome

@ilyassmoumou2777 2 года назад

Now we have two courses. One on electronics and one in English, thank you man, keep it up

@adelbouguerra8361 8 месяцев назад

Salam alaykom mr ISSA. Can you please do a video on LLC converter also it's dedicated PI controller

@alexlo7708 2 года назад

Why don't they add interlock circuit for both transistors in stead of adjust ting dead time on-off?

@gayathrivelayutham2323 3 года назад

Hello could you please help me to design gate driver circuit for igbt

@ashrafshendy9662 2 года назад

Pls. How do you achive dead time by use hardware

@AlHILALFC404 2 года назад

Masha Allah (God bless you ) .that a cool video Did you talk about LDO ??

@WalidIssaPlusE 2 года назад

@psanjewa4 3 года назад

thank you sir .......

@rakeshpanda2116 2 года назад

Great video. Just want to know one thing (regarding high side driving using bootstrap circuit) Don't you think the circuit during low side switch on condition can be further improved. I mean the circuit which is shown here in that, during the time when boost trap capacitor is charging, there is one more parallel path to the boost trap capacitor through the resistor and that will cause slow charging as well as will result in increased power loss. I think there should be one switch complement to S2 in between boost trap capacitor and the resistor so that when S2 is on, that time the only path is through VS, S3, capacitor and S2. And should there be a clamping diode across boost trap capacitor to avoid unwanted high voltage across the driver?

@WalidIssaPlusE 2 года назад

I explained the principle of it but it can be improved

@yongcailai4923 2 года назад

this a good level shit

@fifaham 2 года назад

One of my designes I used the Opto Isolator to isolate the MCU from the home equipment with MOSFET of the high voltage side in boot strap configuration so now you can control the home appliances from the MCU without having to manually switch ON or OFF the home applicance.

@chriswong3729 2 года назад

Hi. I want to ask about the high side driver. On its own do we just as your video say place the capacitor and diode with a resistance? Next thing is that on the IR2117 figure u have placed in the video, is the MOSFET shown there the one we want to drive and that the voltage 600 is the max we can have in the main circuit we are controlling?

@WalidIssaPlusE 2 года назад

first question is not accurate if I say yes so it is no ,, other consideration as explaind should be taken second yes that mosfet shown is the one to be driven

@chriswong3729 2 года назад

@@WalidIssaPlusE if I leave the Vs to only connect to the source of the MOSFET, like the figure shown with the ir2117 will that circuit power the load with vcc of the IC chip during the charging phase of the bootstrap capacitor? Would adding a diode pointing towards the Vs of the IC gate driver with a pull down resistor to ground solve this issue? Since we get isolation using the diode?

@robr8554 4 месяца назад

If Gate is a 2Vs wouldn't you blow the gate? In the case of a GaNFET which can oly take up 6v, this technique require a clamping zener to prevent damages.😊

@mohammedtarifi4569 2 года назад

Mr Waleed thanls for All your efforts, I would like to ask,which is better to use( Ir2110 or similar ) or pulse transformer in high side switching in power supply circuit? what max out ratio can I get at output from supplied voltage at the input? on other hand can I get your whats or any direct connection ,promise not disturb or bother you .all what I need to ask personal questions kind regards Mohammad Tareefi from Jordan

@WalidIssaPlusE 2 года назад

i am not fan of pulse transformer ,, Ir2110 is better ,, read the datasheet to know more details about current can't share whats ,,

@satasauu757 Год назад

How can we make the gate pin negative 9 volts while the MOSFET stops conducting electricity? Help me make a video thank you.

@bayareapianist 2 года назад

Why we can't use a p channel MOSFET for the high side? I know usually p channel MOSFETs are more expensive.

@WalidIssaPlusE 2 года назад

higher on-state resistance so high losses

@bayareapianist 2 года назад

@@WalidIssaPlusE Sorry. Wrong question. P channel would have the exact same problem. It doesn't turn off and requires similar but non symmetric drivers and MOSFETs.

@Mahmoodalhaeyk Год назад

منور دكتور بالإنجليزي والعربي لاتعلمهم للأجانب ههههه 😅

@emirsuhayde6541 3 года назад

Thanks Brother Walid it is interesting,But try NOT to mentioned MOSFET Gate current because as you know MOSFET is Voltage sensitive component not current like Bipolar Transistors. The Gate resistor R1 is pull down ,that mean it must be connected between Gate and Ground,Not in series.

@carlosmf6954 6 месяцев назад

;-)

@alocin110 Год назад

Thank you Walid Sir for the circuit operation and explanation. I have a question about the two different grounds. Please elaborate some more on IR2117. You did not explain the small module RK1212A (Recom). You did not explain well what is this module and why there are four pins and two grounds. Please give some more details and if possible show connection with IR2117. I subscribed to your channel and watch regularly. Your way of circuit analysis is very good. Thank you Sir.